| PART |
Description |
Maker |
| KFH4G16Q2M KFG2G16Q2M |
2Gb OneNAND M-Die
|
Samsung semiconductor
|
| K4B2G1646C |
2Gb C-die DDR3 SDRAM
|
Samsung semiconductor
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| HMT351S6EFR8C-G7 HMT351S6EFR8C-H9 HMT351S6EFR8C-RD |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb E-die
|
Hynix Semiconductor
|
| HMT42GR7CMR4C-G7 HMT351R7CFR4C-H9 HMT42GR7CMR4C-H9 |
DDR3 SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT351S6EFR8A HMT351S6EFR8A-H9 HMT351S6EFR8A-PB HM |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb E-die
|
Hynix Semiconductor
|
| HMT351V7CFR4C-H9 HMT41GV7CMR4C-H9 HMT325V7CFR8C HM |
DDR3 SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
