PART |
Description |
Maker |
K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement) 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices SPANSION[SPANSION]
|
TS16GJFV30 |
16GB USB2.0 JetFlash垄芒V30 16GB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
TS16GJF300 |
16GB USB2.0 JetFlash垄莽300 16GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TS16GJF220 |
16GB USB2.0 JetFlash垄芒220 16GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48 4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON http:// Samsung semiconductor
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|