| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SD992-Z |
Low VCE(sat). Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
| 2SD1367 |
Low frequency power amplifier. Collector to base voltage VCBO 20 V
|
TY Semiconductor Co., Ltd
|
| 2SB1001 |
Low frequency power amplifier Collector to base voltage VCBO -20 V
|
TY Semiconductor Co., Ltd
|
| 2SC3545 |
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. Low Collector to Base Time
|
TY Semiconductor Co., Ltd
|
| 2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
| 2SC2412K |
Low Cob.Cob=2.0pF (Typ.) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BCX17 BCX18 |
Low current (max. 100 mA). Low voltage (max. 32 V).Collector-base voltage VCBO -50V
|
TY Semiconductor Co., Ltd
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
