| PART |
Description |
Maker |
| 3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
| HN3C03FU E002003 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF CONVERTER/ UHF RF AMPLIFIER APPLICATIONS)
TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV153 KDV153A KDV153B KDV153D |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 3SK177 3SK177-T1 3SK177-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
|
NEC
|
| RX2A RX2A-433-10 RX2A-433-64 |
UHF FM receiver module with RSSI
UHF FM Data Transmitter and Receiver Modules
|
Radiometrix Ltd
|
| PBR941 934043060215 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UHF wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
