| PART |
Description |
Maker |
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 3PF0 |
(3PF0 / 3PF8) RECTIFIE
|
Semtech Corporation
|
| TMP93PW32 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP95FW54A |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
|
Toshiba
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| ERG51-09 |
30 A, 900 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
| RHRU7590 |
75 A, 900 V, SILICON, RECTIFIER DIODE
|
FAIRCHILD SEMICONDUCTOR CORP
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| 2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA[Toshiba Semiconductor]
|
| SDR939/3 SDR938/3 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-3
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MAPD-008072-ESSM26 MAPD-008072-ESSM26-15 |
5 MHz - 900 MHz RF/MICROWAVE COMBINER, 1.2 dB INSERTION LOSS ROHS COMPLIANT, SM-1, 6 PIN
E-Series 2-Way Power Divider 5 - 900 MHz
E-Series 2-Way 0° Power Divider
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
