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MCM218165BJ70R - 1M X 16 EDO DRAM, 70 ns, PDSO42

MCM218165BJ70R_7888960.PDF Datasheet


 Full text search : 1M X 16 EDO DRAM, 70 ns, PDSO42
 Product Description search : 1M X 16 EDO DRAM, 70 ns, PDSO42


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PART Description Maker
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
http://
SIEMENS A G
SIEMENS AG
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY 4M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
SIEMENS AG
Infineon Technologies AG
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V 2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
广州运达电子科技有限公司
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS 5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存)
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Integrated Silicon Solution, Inc.
EDI444096CA70BI EDI444096CA60BI EDI444096CA60FI 4M X 4 EDO DRAM, 70 ns, CDSO24
4M X 4 EDO DRAM, 60 ns, CDSO24
4M X 4 EDO DRAM, 60 ns, CDFP24
ELECTRONIC DESIGNS INC
GM71C18163CLT-6 GM71C18163CLJ-7 GM71C18163CLT-7 1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 70 ns, PDSO42
1M X 16 EDO DRAM, 70 ns, PDSO44
HYNIX SEMICONDUCTOR INC
IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
 
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