| PART |
Description |
Maker |
| IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| AP2R803GH-HF14 |
Low On-resistance
Low On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 75m
|
Infineon
|
| DG643 DG642 DG641 |
Low On-Resistance Wideband/Video Switches(低导通电阻宽视频双单刀双掷模拟开
Low On-Resistance Wideband/Video Switches(低导通电阻宽视频单刀双掷模拟开
Low On-Resistance Wideband/Video Switches(低导通电阻宽视频四单刀单掷模拟开
|
Vishay Intertechnology,Inc.
|
| BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| KRF7389 |
Generation V Technology Ultra Low On-Resistance Ultra Low On-Resistance
|
TY Semiconductor Co., Ltd
|
| IPD04N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, D-PAK, RDSon = 3.8mOhm, 50A, LL
|
Infineon
|
|
