PART |
Description |
Maker |
ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2318SRG |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
STP4925 |
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
10-FZ122PA150SC01-P990F18 |
Trench Fieldstop IGBT technology
|
Vincotech
|
SSF1116 |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,...
|