| PART |
Description |
Maker |
| MGFC40V4450A |
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| EIA1114-4 |
11.0-14.0GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| HFA3926 HFA3926IA HFA3926IA96 FN4282 |
From old datasheet system
2.0GHz - 2.7GHz 250mW Power Amplifier
|
INTERSIL[Intersil Corporation]
|
| MAX9381 |
Lowest Power 3.0GHz ECL/PECL Differential Data and Clock D Flip-Flop
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| LTC6085HGNTR LTC6084HDDPBF |
Quad 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
Dual 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
|
Linear Technology
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025109-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024109-011 024109-011 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
