PART |
Description |
Maker |
RJP60V0DPM-80-15 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60M0DPQ-E0 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60A83RDPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D7ADPK-15 |
600V - 50A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D1DPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
22N60 22N60G-T47-T 22N60L-T47-T 22N6011 |
22A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
FCA22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
FCA22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
|
Fairchild Semiconductor
|
FCPF22N60NT |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|