| PART |
Description |
Maker |
| AN4150 |
Power MOSFET technology gate current needs in a synchronous buck converter
|
STMicroelectronics
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF7402PBF IRF7402TRPBF IRF7402PBF-15 |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Generation V Technology
|
International Rectifier
|
| C3M0065100K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
|
Wolfspeed
|
| IRF7406PBF IRF7406TRPBF |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| C3M0120100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| MC74HC1G04 MC74HC1G04DFT1 MC74HC1G04DFT1G MC74HC1G |
Single Inverter
High speed CMOS inverter fabricated with silicon gate CMOS technology HC/UH SERIES, 1-INPUT INVERT GATE, PDSO5
High speed CMOS inverter fabricated with silicon gate CMOS technology 高速CMOS反相器制造硅栅CMOS工艺
|
ONSEMI[ON Semiconductor]
Rectron Semiconductor
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| IRF7403 IRF7403TRPBF |
Generation V Technology
Power MOSFET
|
IRF[International Rectifier]
|
| IRLR8726PBF09 IRLR8726TRR IRLR8726TRPBF IRLR8726PB |
HEXFET Power MOSFET
86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra-Low Gate Impedance
|
International Rectifier
|
