PART |
Description |
Maker |
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
MA721WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS321 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
BAT54 BAT54S BAT54A BAT54C |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Zetex Semiconductors
|
SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
SDB412WS |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
RB551V-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
RB161L-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|