PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR367 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
FME-230A |
Schottky Barrier Diode - 90V/100V 100V, 30A Schottky barrier diode in TO220F package 100V/ 30A Schottky barrier diode in TO220F package CRYSTAL 20.000000 MHZ SMD 8PF
|
SANKEN[Sanken electric] Sanken Electric Co.,Ltd.
|
FMB-2306 |
30A Schottky barrier diode in TO220F package Schottky Barrier Diode - 60V
|
Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
|
KDR331E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
NSR1020MW2T3G NSR1020MW2T1G |
Schottky Barrier Diode(肖特基势垒二极管) 1 A, 30 V, SILICON, SIGNAL DIODE Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
5082-2300 1N5712 5082-2835 5082-2900 1N5711 5082-2 |
Schottky Barrier Diode for General Purpose Applications Schottky Barrier Diodes for General Purpose Applications Rectifier Diode, Schottky Diode, Single, 8V, Outline 15, 2-Pin TV 53C 53#20 PIN PLUG RECP
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Agilent / Hewlett-Packard
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|