| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| NTE455 |
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
|
NTE Electronics
|
| UPA1764 PA1764 UPA1764G |
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
