| PART |
Description |
Maker |
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRC634 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRF[International Rectifier]
|
| IRFR234B IRFU234B IRFU234BTUFP001 |
250V N-Channel B-FET / Substitute of IRFU234A
250V N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
| IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A
250V N-Channel B-FET / Substitute of IRF624 & IRF624A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR214 IRFU214 |
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)
|
IRF[International Rectifier]
|
| FQD6N25 FQU6N25TU FQD6N25TF FQD6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET
|
Fairchild Semiconductor
|
