| PART |
Description |
Maker |
| IKD06N60R |
IGBT with integrated diode in packages offering space saving advantage
|
Infineon Technologies A...
|
| BUP602D Q67040-A4229-A2 BUP602-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG25Q906H MIG25Q906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| IXDP35N60B IXDH35N60B IXDH35N60BD1 |
IGBT Discretes: NPT IGBT
IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
