| PART |
Description |
Maker |
| PSMN9R5-100PS |
N-channel 100 V 9.6 mstandard level MOSFET in T0220
|
NXP Semiconductors
|
| PSMN9R5-100BS |
N-channel 100 V 9.6 mstandard level MOSFET in D2PAK
N-channel 100 V 9.6 m standard level MOSFET in D2PAK
|
NXP Semiconductors
|
| BUK7K5R6-30E |
Dual N-channel 30 V, 5.6 mstandard level MOSFET
|
NXP Semiconductors
|
| PSMN4R6-100XS |
N-channel 100V 4.6 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN7R0-100XS |
N-channel 100V 6.8 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| SI4982DY SI4982DY-T1 |
2.6 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Dual N-Channel 100-V (D-S) MOSFET
Dual N-Channel, 100-V, (D-S) Rated MOSFET
|
VISHAY INTERTECHNOLOGY INC
VISAY[Vishay Siliconix]
|
| SUP90N10-09 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
|
