| PART |
Description |
Maker |
| TI160808G101 TI160808G600 TI160808G601 TI160808Z22 |
SMD MULTILAYER FERRITE CHIP BEADS (HIGH CURRENT)
|
Frontier Electronics.
|
| TI322513U600 TI322513U650 |
SMD MULTILAYER FERRITE CHIP BEADS (HIGH CURRENT)
|
Frontier Electronics.
|
| SDR1005-R68ML SDR1005-2R5ML |
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| BMB1206-P1A-121 BMB1206-P1A-601 BMB1206-P1A-500 BM |
High Current Surface Mount Multilayer Chip Beads, 0603 - 1812 Industry Sizes 高电流表面贴装多层片式磁珠，0603 - 1812年工业规
|
Electronic Theatre Controls, Inc.
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
