| PART |
Description |
Maker |
| GS81302DT19AGD-450 GS81302DT19AGD-450I GS81302DT19 |
144Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
|
GSI Technology
|
| GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
| GS81302D08GE-300 |
144Mb SigmaQuadTM-II Burst of 4 SRAM
|
GSI Technology
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| GS881E36 GS881E36T-11.5I GS881E36T-66I GS881E36T-1 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology
|
| BCM3138 |
Dual Universal DOCSIS®/EuroDOCSIS™ 1.1 Burst Receiver
DUAL UNIVERSAL ADVANCED TDMA PHY-LAYER BURST RECEIVER
|
Broadcom Corporation.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| MT45W2MW16B MT45W2MW16BFB |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
|
Micron Semiconductor
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
