PART |
Description |
Maker |
K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC SSR H/S ZS 600V 70A 4-32VDC 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存 ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存 DSUB 25 M PCR/A G
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM)的
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Hitachi,Ltd.
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MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
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http:// Elpida Memory
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HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Ultra-High-Precision SOT23 Series Voltage Reference POT 5K OHM 9MM HORZ NO BUSHING Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30 Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM POT 20K OHM 9MM HORZ NO BUSHING 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
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Elpida Memory, Inc. http://
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MX23J25640 MX23J25640TI-50G MX23J25640TC-50 MX23J2 |
256M-BIT NAND INTERFACE XtraROMTM
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MXIC MCNIX[Macronix International]
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HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
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Hynix Semiconductor, Inc.
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W29GL256PL9B W29GL256PL9T-TR W29GL256PH9T W29GL256 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
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Winbond
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MC-4R256FKE8S-845 MC-4R256FKE8S |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
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Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
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Renesas Electronics Corporation.
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MB81EDS256445 |
MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
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Elpida Memory, Inc. ELPIDA MEMORY INC
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