| PART |
Description |
Maker |
| STS2300S |
S uper high dense cell design for low R DS
|
TY Semiconductor Co., Ltd
|
| STA6968 |
S uper high dense cell design for low R DS (ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
|
SamHop Microelectronics...
|
| RS45112A400G RS4511119A04 RS45111A900F RS45111ABA0 |
Standard Type（Super SlideTM)
Standard Type锛?uper SlideTM)
Standard Type拢篓Super SlideTM)
|
ALPS ELECTRIC CO.,LTD.
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| CXOMHT |
High Temperature/High Stability/Fast Start-up/High Shock
|
STATEK CORPORATION
|
| LTC4440-5-15 |
High Speed, High Voltage, High Side Gate Driver
|
Linear Technology
|
