| PART |
Description |
Maker |
| SMLE12EC6T SMLE12BC7T SMLE12BC7TT86 SMLE13BC8T SML |
SML-E1 Series
EXCELEDTM series Compact, Thin size (1.6×0.8mm, t=0.36mm)
|
Rohm
|
| MUR1010CT MUR1020CT |
TIP REPL SLOT SMD SOT-23 MX SER
10 Amp Super Fast Gl ass Passivated Rectifier 100 to 200 Volts
|
整流
MCC[Micro Commercial Components]
|
| OPB871N51TX OPB871N51TV OPB872N51TV |
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 208mil, TUBE
Photo Gap Detector
|
|
| SML-512CWA |
SML-51 Series
|
Rohm
|
| SML-R12Y8T SMLR13WBDW3 |
SML-R1 Series PICOLED-side
SML-R1 Series PICOLED-side
|
Rohm
|
| 74LVT374PW-T 74LVT374DB-T |
16K SPI, 2K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-MSOP, T/R
Octal D-Type Flip-Flop
|
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| MHF64SGL MHF64SGS MHF26SGL MHF26SGS |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
