| PART |
Description |
Maker |
| SCD0803 SCD0803-15 |
VOLTAGE 200V ~800V 0.8 AMP Glass Passivated Ultra Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SPD02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| RH101 RH103 RH105 |
Voltage 100V ~ 800V 0.8 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SCDS106 |
VOLTAGE 800V 1.0 AMP Glass Passivated Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| SCDS0506 |
VOLTAGE 800V 0.5 AMP Glass Passivated Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SCD5393S |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC3184K 2SC3184M 2SC3184L |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 500MA I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五（巴西）总裁| 500mA的一（c）| TO - 220AB现有
|
CTS, Corp.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
