PART |
Description |
Maker |
IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm 1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
TLP1001A E006217 PLP1000A PLP1001A P1001A P100A TL |
THSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC THSHIBA光电断路器红外LED相机芯片 From old datasheet system TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
BIR-BO731 BIR-NL7C1 BIR-BM734 BIR-BL734 |
3 mm, 1 ELEMENT, INFRARED LED, 840 nm 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
R878 R87810 L9337 |
High power LED for optical switches 4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|