| PART |
Description |
Maker |
| IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 8.0ohm，身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| FQAF11N90C |
900V N-Channel Advance Q-FET C-series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP8N90C FQPF8N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFPF50 IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
|
International Rectifier
|
| IXYH12N250C |
High Voltage XPTTM IGBT
|
IXYS Corporation
|
| IXYX50N170C |
High Voltage XPTTM IGBT
|
IXYS Corporation
|
| IXYR50N120C3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| IXYH16N250CV1HV |
High Voltage XPTTM IGBT w/ Diode
|
IXYS Corporation
|
| FQI2N90 FQB2N90 FQB2N90TM FQI2N90TU |
900V N-Channel MOSFET
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
