| PART |
Description |
Maker |
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CGH27015F CGH27015F-TB CGH27015F-AMP |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| MAGX-000025-150000-V1 MAGX-000025-150000-15 |
GaN on SiC HEMT Power Transistor
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
