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| ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT681 Repetitive voltage up to Mean on-state current Surge current 6000 V 840 A 10 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [C] 120 120 120 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 6000 6100 6000 150 150 V V V mA mA 120 120 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance 180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 1570 A 25 120 120 120 840 705 10 500 x1E3 2.4 1.3 1.150 A A kA As V V mohm I t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 1200 A Linear ramp up to 75% of VDRM VD=200V, gate source 20V, 10 ohm dV/dt = 20 V/s linear up to 80% VDRM di/dt=-60 A/s, I= 1000 A VR= 50 V 120 120 25 120 25 25 100 500 5 650 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation Pulse width 100 s VD=5V 0.5 VDRM 25 25 120 3.5 400 0.5 30 10 5 150 2 V mA V V A V W W MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT681 S 60 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 21 6 120 22.0 / 24.5 520 C/kW C/kW C kN g VDRM&VRRM/100 AT681 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 120 110 100 90 30 80 60 70 60 50 0 200 400 90 120 180 DC 600 IF(AV) [A] 800 1000 1200 PF(AV) [W] 3500 3000 180 DC 2500 60 120 90 2000 30 1500 1000 500 0 0 200 400 600 IF(AV) [A] 800 1000 1200 AT681 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 120 110 100 90 30 80 60 70 90 120 180 60 50 0 200 400 600 IF(AV) [A] 800 1000 1200 PF(AV) [W] 3500 3000 2500 60 120 90 180 2000 1500 1000 500 0 0 200 30 400 600 IF(AV) [A] 800 1000 1200 AT681 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ANSALDO ON-STATE CHARACTERISTIC Tj = 120 C SURGE CHARACTERISTIC Tj = 120 C 3000 10 9 2500 8 On-state Current [A] 2000 ITSM [kA] 0.6 1.6 2.6 On-state Voltage [V] 3.6 4.6 7 6 5 4 3 500 2 1 0 0 1 10 n cycles 100 1500 1000 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0 20.0 Zth j-h [C/kW] 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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