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| DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW B E D G H K J L M E B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1S Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMBT9022 50 40 5.0 100 225 556 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo Min 50 40 5.0 3/4 3/4 270 3/4 2.0 Typ. Max 3/4 3/4 3/4 500 500 630 0.4 3.5 Unit V V V nA nA 3/4 V pF Test Condition IC = 50mA, IE = 0 IC = 1.0mA, IB = 0 IE = 50mA, IC = 0 VCB = 30V VEB = 4.0V IC = 1.0mA, VCE = 6.0V IC = 50mA, IB = 5.0mA VCB = 12V, f = 1.0MHz, IE = 0 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30056 Rev. 2P-5 1 of 1 DMBT9022 |
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