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DATA SHEET
BIPOLAR NALOG NTEGRATED IRCUIT
PC2726T
1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
DESCRIPTION
The PC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier. This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement equipment applications. This IC can also use as differential oscillator application. The PC27xx series is manufactured using NEC's 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. external pollution and prevent corrosion and migration. performance, uniformity and reliability. These materials can protect the chips from Thus, this process can produce the ICs with excellent
FEATURES
* Wide frequency respone - fU= 1.6 GHz @ -3 dB GP, VCC = 5 V * Power gain - GP = 15 dB @ 5 V * Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA * 6 pin mini mold for high-density surface mounting.
ORDERING INFORMATION
PART NUMBER PACKAGE 6 pin mini mold SUPPLYING FORM Embossed tape 8 mm wide. 3 kp/reel. Pin 1, 2, 3 face to perforation side of the tape.
PC2726T-E3
* For evaluation sample order, please contact your local NEC sales office. (Part number: PC2726T)
EQUIVALENT CIRCUIT
<5> VCC
PIN CONNECTIONS
(Top View) (Bottom View)
RF OUT <4> RF IN <6>
<3> RF OUT <1> RF IN
3 2 1
C1P
4 5 6 1. INPUT 2. GND 3. OUTPUT 4. OUTPUT 5. VCC 6. INPUT
4 5 6
3 2 1
<2> GND
Caution: Electro-static sensitive device
Document No. P10873EJ2V0DS00 (2nd edition) (Previous No. IC-3125) Date Published March 1997 N Printed in Japan
(c)
1994
PPC2726T
ABSOLUTE MAXIMUM RATINGS
Supply Voltage VCC Power Dissipation of Package Allowance PD 6 280 V mW TA = +25 C Mounted on 50 u 50 u 1.6 mm epoxy glass PWB at TA = +85 C TA = +25 C
Input Power Operating Temperature Storage Temperature
Pin Topt Tstg
0 40 to +85 55 to +150
dBm C C
RECOMMENDED OPERATING CONDITIONS
PARAMETERS Supply Voltage Operating Temperature SYMBOL VCC TA MIN. 4.5 40 TYP. 5.0 +25 MAX. 5.5 +85 UNIT V C
ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = 5. V, ZL = ZS = 50 :)
PARAMETERS Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fU ISL RLin RLout PO(sat) 5 1.0 MIN. 8.0 11.0 TYP. 11.5 15 4.5 1.6 60 2.0 4.0 2 MAX. 15.0 17.0 6.0 UNIT mA dB dB GHz dB dB dB dBm TEST CONDITIONS No input signal f = 400 MHz f = 400 MHz 3 dB down below flat gain at 0.4 GHz f = 400 MHz f = 400 MHz f = 400 MHz f = 400 MHz, Pin = 10 dBm
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 C, ZL = ZS = 50 :)
REFERENCE VALUE 2.5 4.5 5.1 2.4 58 1.0 4.0 14 29 45
PARAMETERS Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Power 3rd Order Intermodulation Distortion
SYMBOL ICC GP NF fu ISL RLin RLout PO(sat) IM3
UNIT mA dB dB GHz dB dB dB dBm dBc
TEST CONDITIONS VCC = 2 V, No input signal VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz 3 dB down below flat gain at 0.4 GHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz, Pin = 10 dBm VCC = 2 V, PO(each) = 25 dBm, f1 = 400 MHz, f2 = 402 MHz VCC = 5 V, PO(each) = 25 dBm, f1 = 400 MHz, f2 = 402 MHz
3rd Order Intermodulation Distortion
IM3
dBc
2
PPC2726T
TEST CIRCUITS
DC Parameters
VCC 5.0 V
IN IN
OUT OUT
AC Parameters
VCC 5.0 V
1 000 pF CIN1 (1 000 pF) IN CIN2 (1 000 pF) IN COUT1 (1 000 pF) OUT COUT2 (1 000 pF) OUT
3
PPC2726T
TYPICAL CHARACTERISTICS (Unless otherwise specified TA = +25 C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 18 No input signals 16 VCC = 5.0 V 14 CIRCUIT CURRENT vs. OPERATING TEMPERATURE
ICC - Circuit Current - mA
ICC - Circuit Current - mA
2 3 4 VCC - Supply Voltage - V 6
16 14 12 10 8 6 4 2 0 1 5
12 10 8 6 4 2 0 -40 -20 0 20 40 60 80 100
Topt - Operating Temperature - C
NOISE FIGURE, POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY 20 -40 C +25 C
GP - Power Gain - dB
20 GP 10
GP - Power Gain - dB
VCC = 5.5 V 5.0 V 4.5 V 3.0 V 2.0 V
10
VCC = +85 C
NF - Noise Figure - dB
9 7
0
NF 5 3 1 0.1
VCC = 2.0 V VCC = 4.5 V - 5.5 V
0
VCC = 5.0 V 0.3 1.0 2.0 3.0 -5 0.1 0.3 1.0 2.0 3.0
f - Frequency - GHz
f - Frequency - GHz
ISOLATION vs. FREQUENCY
0
RETURN LOSS vs. FREQUENCY 0 RLin RLout -10 RLout RLin
VCC = 5.0 V
ISL - Isolation - dB
-20
RLin - Input Return Loss - dB RLout - Output Return Loss - dB
0.3 1.0 2.0 3.0
-40
-20
-60
-30
-80 0.1
-40 0.1
0.3
1.0
2.0
f - Frequency - GHz
f - Frequency - GHz
4
PPC2726T
OUTPUT POWER vs. INPUT POWER 10 f = 400 MHz
PO - Output Power - dBm
OUTPUT POWER vs. INPUT POWER 10 VCC = 5.0 V f = 400 MHz 0 TA = +25 C
PO - Output Power - dBm
0
VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V
TA = +85 C
-10
-10
TA = -40 C
-20 VCC = 2.0 V -30
-20
-30
-40 -50
-40
-30
-20
-10
0
-40 -50
-40
-30
-20
-10
0
Pin - Input Power - dBm
Pin - Input Power - dBm
OUTPUT POWER vs. INPUT POWER 10 f = 1 GHz
PO - Output Power - dBm
OUTPUT POWER vs. INPUT POWER 10 VCC = 5.0 V
PO - Output Power - dBm
0
VCC = 5.5 V VCC = 5.0 V
0
-10
VCC = 4.5 V
-10 f = 400 MHz -20
-20 VCC = 2.0 V -30
-30
f = 1 GHz
-40 -50
-40
-30
-20
-10
0
-40 -50
-40
-30
-20
-10
0
Pin - Input Power - dBm SATURATED OUTPUT POWER vs. FREQUENCY 0
PO(sat) - Saturated Output Power - dBm
Pin - Input Power - dBm 3rd ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 400 MHz f2 = 402 MHz 50 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V
-2 -4 -6 -8 -10 -12 VCC = 2.0 V -14 -16 -18 -20 0.1 0.2 0.5 1 2 3 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V
IM3 - 3rd Order Intermodulation Distortion - dBc
40
30 VCC = 2.0 V 20
10 -40
-30
-20
-10
0
f - Frequency - GHz
PO(each) - Output Power of Each Tone - dBm
5
0.1
0.1
0.2
0.2
0.3
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 FLECTION COEFFCIENT 0.4 RE 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 - 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. -1 EA OM C
0.1 0.1
0.2
C
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 FLECTION COEFFCIENT 0.4 0.0TOR 3 OF RE IN DE 7 0.0 .46 4 NGLE GRE 0 0A 0.4 ES 0 4 -16 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. -1 EA OM C
0.3
0.3
0.
0.
0.
-1
-1
NE G
0.4 02 .08 0 00 .43 0. 07 30
NE G
8 0.0 2 0.4
0.4 02 .08 0 00 .43 0. 07 30
0. 5
E IV AT
N
0. 5
5 0.
12 0
0
-
-1 2
0.
4
4
0.4 1 0.0 9
0.4 1 0.0 9
0.40 0.10 -11 0
0.40 0.10 -11 0
0.38 0.39 0.12 0.11 -100
-90
0.2
0.2
0.2
0.2
0.4
0.4
0.4
0.13 0.37
0.37 0.13
0.13 0.37
0.38 0.37 0.39 0.12 0.13 0.11 -90 -100
0.6
0.6
1.2
1.2
0.6
0.4
0.6
0.6
8
0.
0.
0.8
0.8
1.2
0.2
1.2
0.
1.4
0.8
1.
1.4
8
0
0
1.
0.14 0.36 80
0.36 0.04 -80
0.36 0.04 -80
0.14 0.36 80
1.6
0
1.
-70
-70
0.35 0.15
0.35 0.15
0
0
4 0.3 6 0.1
4 0.3 6 0.1
-6
-6
0.1
3 0.3 7 0.1
3 0.3 7
0
0
-5
-5
32 18 0.
32 18 0.
0. 18 32
0.
0.
0
0
3.
4.0
6.0
6.0
10
20
400 M
10
20
50
50
0.2
2
100 M
0.2
0
1 0 .2 9 0.2
0.2
8 20
0.23 0.27
10
0.24 0.26
0.25 0.25
0
0.26 0.24
-10
0.27 0.2 0.23 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 -3 0.2 0 0 0
0.2
0
50
50
20
0.3
0
30
0.3
0
1 0.2 9 0.2
30
20
6.0
20
19 0 . 31 0.
0. 0. 31 19
19 0. 31 0.
4.0
4.0
40
-4
40
400 M
0
100 M
3.
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 - 0.2 0 0
30
-4
0
0. 0. 31 19
6
S22-FREQUENCY
WAVELE NG
S PARAMETER
S11-FREQUENCY
WAVELE NG
0.2
0.3
C
0.
0.
4
07
0.
07 43 0. 0 13
4
E NC TA AC - JX- - RE --ZO
(
E IV AT
0.3
)
0.2
O
( -Z-+-J-XTANCE CO ) MPO
E NC TA AC - JX- - RE --ZO
(
0.4
)
0.2
43 0 13
( -Z-+-J-XTANCE CO ) MPO
O
N
5 0.
T EN
T EN
0.3
0 12
8 0.0 2 0.4 20 1
0.6
0.6
9 0.0 1 0.4
9 0.0 1 0.4
0.4
0.7
0.7
0.6
0.6
0.10 0.40 110
0.10 0.40 110
0.7
0.5
0.5
0.7
(
(
0.8
0.8
0.8
0.6
0.6
0.8
)
0.11 0.39 100
0.11 0.39 100
0.7 0.8
0.9
0.9
0.7 0.8 0.9
0.9
)
0.9
0.12 0.38
0.12 0.38
0.9
REACTANCE COMPONENT R ---- 0.2 ZO
REACTANCE COMPONENT R ---- 0.2 ZO
1.0
90
90
1.0
0.2
1.0
1.0
1.0
0.2
1.0
0.4
0.4 0.4
0.6
0.4
0.6
0.6
0.
0 1.
1.4
1.4
0.2
8
0.8
8
1.8 2.0
1.
0
1.
0
1.6 1.8 2.0
1.
0
1. 0
1.4
1.4
70
0.15 0.35
1G
0.15 0.35
70
1.6
1.6
1.6
1.6
0.1 6 0.3 4
0.1 6 0.3 4
1.8
3.0
1.8
1.8
3.0
1.8
6 00
6 00
0.1 0.3 7 3
0.1 0.3 7 3
2.0
4.0 5.0
2.0
2.0
4.0 5.0
2.0
50
50
0.
0.
1G
3. 0
10
0. 18 32
3. 0
10
4.0
6.0
10
10
50
20
50
PPC2726T
PPC2726T
ILLUSTRATION OF THE EVALUATION BOARD FOR TEST CIRCUIT
3.5 4 7 16- 2.3 10.2 7 5.5 10 23 14 16.5 4 11 7.2 1.2 14 11 3 1 1.2 (8.8)
9- 0.8
(6) 5
11.2
22
135
23
9 14 35
1.8
9
2.03
7.23
1.8
0.740.02
18.9
2
2.060.02
9 14
2
2
3.8
1
6
4
8
11
1.8 1 1.2 20.24 12.5 14 1.52 11.5 7 42
8.24
4 3.5
Note
7.23
2 2 2
2.03
2
135 1.51
2 2
(1) 50 x 50 x 0.5 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) : Through holes
2
2 3.51
0.
29
0.
74
DETAIL LAYOUT
2.03
t = 0.4
7.28
0.
74
142.23
(4.83)
18.160.02
5
12
1
2.060.02 0.740.02 5.44 2.4
1
2.03
2.060.02
2.03
2.03 2.03
2.03
2.03
45
7
PPC2726T
EXAMPLE FOR SYSTEM APPLICATION
DBS tuner
DC AMP DET
1st IF input
RF amp.
ATT RF amp.
MIX.
IF amp. Sound Visual
< From ODU. >
PC2723T PC2726T
FM DEMO
VCO OP LPF
PLL
8
PPC2726T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.3 +0.1 -0.05 0.130.1
1
2.8 -0.3 1.5 -0.1
+0.2 +0.2
2
3
0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 -0.1
+0.2
1.9 2.90.2
9
PPC2726T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
PPC2726T
Recommended condition symbols IR35-00-3
Soldering process Infrared ray reflow
Soldering conditions Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C), Time: 3 times, Limited days; no.* Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C), Time: 3 times, Limited days: no.* Soldering tub temperature: less than 260 C, Hour: within 10 s. Time: 1 time, Limited days: no. Pin area temperature: less than 300 C, Hour: within 3 s. Limited days: no.*
VPS
VP15-00-3
Wave soldering
WS60-00-1
Pin part heating
*: It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
10
PPC2726T
[MEMO]
11
PPC2726T
The applicatoin circuit and circuit constants shown in this document are for reference only and may not be employed for mass production of the application system.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

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