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2SK2893-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 4m 100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Characteristics 30 100 400 16 2536.7 150 150 -55 ~ +150 L=0.338mH,Vcc=12V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I DSS R DS(on) g C C C t t t t I V t Q fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=100A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C Min. 30 Typ. 1,5 10 0,2 10 4,8 3,2 90 6600 3300 1400 20 150 470 370 1,0 95 0.22 Max. 2,0 500 1,0 100 7,0 4,0 9900 4950 2100 30 230 710 560 1,5 1,0 Unit V V A mA nA m S pF pF pF ns ns ns ns A V ns C 45 100 - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to air Min. Typ. Max. 0,83 35,00 Unit C/W C/W N-channel MOS-FET 30V 2SK2893-01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=25A; VGS=10V 4m 100A 150W Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C > Characteristics Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=50A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch): VCC=12V; IAV 50A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance EAV [mJ] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 30V 2SK2893-01 FAP-IIIB Series Typical Switching Characteristics t=f(ID): VCC = 15V, VGS = 10V, RG = 10 4m 100A 150W > Characteristics t [ns] VSD [V] Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
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