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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit -- Q = 450 (Typ) @ V R = 3.0 Vdc, f = 50 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching * Hyper Abrupt Junction Process Provides High Tuning Ratio
MMBV609LT1
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
3
1 2
CASE 318-08, STYLE 9 SOT- 23 (TO-236AB)
1
2
3
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 20 100 225 1.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T A=25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance (VR=3.0 Vdc,f=1.0MHz) Capacitance Ratio C3/C8 (f=1.0MHz) Figure of Merit (VR=3.0 Vdc, f=50MHz) Symbol V (BR)R IR CT CR Q Min 20 -- 26 1.8 250 Typ -- -- -- -- 450 Max -- 10 32 2.4 -- Unit Vdc nAdc pF -- --
MMBV609LT1-1/2
LESHAN RADIO COMPANY, LTD.
MMBV609LT1
TYPICAL CHARACTERISTICS
50
1000
C T , DIODE CAPACITANCE (pF)
f = 1.0MHz T A = 25C
Q , FIGURE OF MERIT
40
V R =3Vdc T A = 25C
100
30
20
10
0 1 2 3 5 7 10 20 30 50
10 10 100 1000
V R , REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( MHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT ,DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125
V R= 3.0Vdc f = 1.0MHz
T A , AMBIENT TEMPERATURE (C)
Figure 3. Diode Capacitance
MMBV609LT1-2/2

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Price & Availability of MMBV609

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1G 45J1543	onsemi	Varicap Diode, 32Pf, 10Na, Sot-23, Full Reel; Capacitance Cd Max @ Vr F:32Pf; Forward Current If(Av):100Ma; Repetitive Reverse Voltage Vrrm Max:20V; Operating Temperature Max:125°C; Diode Case Style:Sot-23; No. Of Pins:3 Pin Rohs Compliant: Yes \|Onsemi MMBV609LT1G		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1 MMBV609LT1OSCT-ND	onsemi	DIODE TUNING SS 20V SOT23		0
MMBV609LT1 MMBV609LT1OSTR-ND	onsemi	DIODE TUNING SS 20V SOT23		0
MMBV609LT1G MMBV609LT1GOSDKR-ND	onsemi	DIODE TUNING SS 20V SOT23	1: USD0.47	0
MMBV609LT1G MMBV609LT1GOSTR-ND	onsemi	DIODE TUNING SS 20V SOT23	75000: USD0.07471 30000: USD0.08793 9000: USD0.08908 6000: USD0.10057 3000: USD0.10287	0
MMBV609LT1G MMBV609LT1GOSCT-ND	onsemi	DIODE TUNING SS 20V SOT23	1: USD0.47	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1G	onsemi			16312

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1G	onsemi	VHF BAND, 29 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB	2144: USD0.6 1001: USD0.7 1: USD2	13049

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1	NXP Semiconductors			32

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1G	MFG UPON REQUEST			56

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV609LT1G	Motorola Semiconductor Products	MMBV609LT1G		0

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