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| Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25C) Symbol VCBO VCEO VEBO hFE fT Cre Zrb * Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA min 30 20 5 70 150 typ max 4.10.2 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit V V V 250 230 1.3 1.6 60 MHz pF *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 10 IB=100A 100 2SC2647 IC -- VCE 120 VCE=10V Ta=25C IB -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 8 60A 6 40A Base current IB (A) 18 80A 80 300 60 200 4 40 100 2 20A 20 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 0.6 1.2 1.8 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 100 30 10 3 1 0.3 VCE(sat) -- IC IC/IB=10 600 hFE -- IC VCE=10V Forward current transfer ratio hFE 500 Ta=75C 400 25C 300 -25C 200 Collector current IC (mA) 40 25C 30 Ta=75C 20 -25C Ta=75C 25C 0.1 0.03 0.01 0.1 -25C 10 100 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V 500 2.0 400 VCB=10V 6V 200 1.6 300 1.2 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob -- VCB 1.6 12 yie=gie+jbie VCE=10V 2SC2647 bie -- gie 0 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V f=0.45MHz 10.7 25 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25C Input susceptance bie (mS) 10 100 - 0.5 8 58 -1.0 - 0.4mA -1mA -1.5 -2mA -4mA 58 6 25 10.7 IE=- 0.4mA -1mA -2mA -4mA -7mA f=0.45MHz 4 -2.0 2 -2.5 100 IE=-7mA 0 30 100 0 4 8 12 16 20 -3.0 - 0.5 -0.4 - 0.3 - 0.2 - 0.1 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe -- gfe 0 boe -- goe 0.45 Forward transfer susceptance bfe (mS) - 0.1mA - 0.4mA 25 100 100 58 0.45 10.7 -1mA 1.2 100 10.7 -20 Output susceptance boe (mS) -2mA 25 58 1.0 -4mA 100 -40 100 58 25 f=10.7MHz 0.8 58 0.6 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 -7mA -4mA -2mA -1mA - 0.4mA IE=- 0.1mA -60 58 IE=-7mA -80 -100 yfe=gfe+jbfe VCE=10V yoe=goe+jboe VCE=10V 0.6 0.8 1.0 -120 0 20 40 60 80 100 0 Forward transfer conductance gfe (mS) Output conductance goe (mS) 3 |
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