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| Si5406DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 12 FEATURES ID (A) 9.5 8.5 rDS(on) () 0.020 @ VGS = 4.5 V 0.025 @ VGS = 2.5 V D TrenchFETr Power MOSFETS: 2.5-V Rated D Low Thermal Resistance APPLICATIONS D Load/Power Switching for Cell Phones and Pagers D PA Switch in Cellular Devices D Battery Operated Systems D 1206-8 ChipFETt t 1 D D D D S D D G Marking Code AC XXX Lot Traceability and Date Code G Bottom View Part # Code S N-Channel MOSFET Ordering Information: SI5406DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 12 8 9.5 6.8 20 2.1 2.5 1.3 Steady State Unit V 6.9 4.9 A 1.1 1.3 0.7 --55 to 150 260 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71657 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5406DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 1.2 mA VDS = 0 V, VGS = 8 V VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 85_C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.9 A VGS = 2.5 V, ID = 2 A VDS = 10 V, ID = 6.9 A IS = 1.1 A, VGS = 0 V 20 0.017 0.021 30 0.7 1.2 0.020 0.025 0.6 100 1 5 V nA mA A S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 ID 1 A, VGEN = 4.5 V, RG = 6 VDS = 6 V, VGS = 4.5 V, ID = 6.9 A 13.7 2.3 4.1 17 46 54 29 35 25 70 80 45 70 ns 20 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 15 I D -- Drain Current (A) I D -- Drain Current (A) 2V 16 20 Transfer Characteristics 12 10 8 TC = 125_C 4 25_C 0 0.0 --55_C 1.5 2.0 2.5 5 1V 0 0.0 1.5 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-2 Document Number: 71657 S-21251--Rev. B, 05-Aug-02 Si5406DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) -- On-Resistance ( ) 1800 1500 VGS = 2.5 V VGS = 4.5 V C -- Capacitance (pF) 1200 900 600 Crss 300 0 0 4 8 12 16 20 0 3 6 9 12 Coss Ciss Capacitance 0.024 0.018 0.012 0.006 0.000 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 6 V ID = 6.9 A 4 1.4 1.3 1.2 1.1 1.0 0.9 0.8 --50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.9 A 3 2 1 0 0 4 8 12 16 Qg -- Total Gate Charge (nC) r DS(on) -- On-Resistance () (Normalized) --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S -- Source Current (A) 10 r DS(on) -- On-Resistance ( ) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage ID = 6.9 A TJ = 25_C 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71657 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5406DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 1.2 mA --0.0 --0.1 --0.2 --0.3 --0.4 --50 10 Power (W) 30 50 Single Pulse Power 40 20 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 10 100 600 TJ -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71657 S-21251--Rev. B, 05-Aug-02 |
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