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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N6427 NPN Darlington transistor
Product specification File under Discrete Semiconductors, SC04 1997 Jul 04
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES * High current (max. 500 mA) * Low voltage (max. 30 V) * High DC current gain (min. 10000). APPLICATIONS * General purpose * High gain amplification. DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package.
MAM252
2N6427
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
handbook, halfpage
2
1
1
2 3 TR1 TR2
3
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation DC current gain transition frequency Tamb 25 C IC = 10 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter VBE = 0 CONDITIONS - - - - 10000 125 MIN. MAX. 40 30 500 625 100000 - MHz V V mA mW UNIT
1997 Jul 04
2
Philips Semiconductors
Product specification
NPN Darlington transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 C VBE = 0; IB = 0; VCE = 30 V IC = 0; VEB = 10 V VCE = 5 V; note 1 IC = 10 mA IC = 100 mA IC = 500 mA VCEsat VBEsat VBEon fT Note 1. Pulse test: tp 300 s; 0.02. 1997 Jul 04 3 collector-emitter saturation voltage IC = 50 mA; IB = 0.5 mA; note 1 IC = 500 mA; IB = 0.5 mA; note 1 base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = 500 mA; IB = 0.5 mA; note 1 IC = 50 mA; VCE = 5 V 10000 20000 14000 - - - - - - - - MIN. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 200 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 VBE = 0 open collector CONDITIONS open emitter - - - - - - - -65 - -65 MIN.
2N6427
MAX. 40 30 10 500 800 200 625 +150 150 +150 V V V
UNIT
mA mA mA mW C C C
UNIT K/W
MAX. 100 10 100 100 100000 200000 140000 1.2 1.5 2 1.75 - V V V V
UNIT nA A nA nA
IC = 10 mA; VCE = 5 V; f = 100 MHz 125
MHz
Philips Semiconductors
Product specification
NPN Darlington transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
2N6427
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
1997 Jul 04
4
Philips Semiconductors
Product specification
NPN Darlington transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
2N6427
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 04
5
Philips Semiconductors
Product specification
NPN Darlington transistor
NOTES
2N6427
1997 Jul 04
6
Philips Semiconductors
Product specification
NPN Darlington transistor
NOTES
2N6427
1997 Jul 04
7
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/01/pp8
Date of release: 1997 Jul 04
Document order number:
9397 750 02585

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