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| UPS340 3 A LOW Vf Schottky Barrier Rectifier DESCRIPTION KEY FEATURES WWW . Microsemi .C OM In Microsemi's new Powermite3(R) SMT package, these high efficiency ultrafast rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, Powermite3(R) package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load @ Tc =100 C Storage Temperature Operating Temperature Symbol VRRM VRWM VR V R (RMS) Io IFSM T stg T op Value Unit ! High power surface mount package. ! Guard Ring die construction for transient protection. ! Silicon Schottky rectifiers no reverse voltage recovery. ! Internal heat sink locking tabs ! Low forward voltage. ! Full metallic bottom eliminates flux entrapment ! Compatible with automatic insertion equipment ! Low profile-maximum height of 1mm supplied in 16 mm tape reel- 5000 units/ 13" reel. 40 28 3 50 -55 to +150 -55 to +125 V V A A C C APPLICATIONS/BENEFITS ! Switching and Regulating Power Supplies. ! Charge Pump Circuits. ! Reduces reverse recovery loss due to low IRM. ! Small foot print 190 X 300 mils 1:1 Actual size THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to Bottom (1) When Mounted on PC board with 2 ounce copper pattern. Rja (1) 2.5 C/Watt UPS340 UPS340 Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 1 UPS340 3 A LOW Vf Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) WWW . Microsemi .C OM Parameter Forward Voltage (Note 1) Symbol Conditions IF = 3 A , IF = 3 A , IF = 6 A , IF = 6 A , Tj =25 C Tj =125 C Tj =25 C Tj =125 C Min Typ. 0.46 0.40 0.57 0.54 Max 0.50 0.44 0.61 0.58 Units VFm Reverse Break Down Voltage (Note 1) Reverse Current (Note1) Irm Capacitance CT V VBR IR = 0.5 mA VR = 40V, Tj = 25 C VR = 40V, Tj =100 C VR = 4 V; F = 1 MHZ 40 15 10 180 500 20 V uA mA pF Note: 1 Short duration test pulse used to minimize self - heating effect. ELECTRICALS ELECTRICALS Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 2 UPS340 3 A LOW Vf Schottky Barrier Rectifier WWW . Microsemi .C OM Notes: 1. TA = TSOLDERING POINT, RJS = 3.4 C/W Rsa = 0 C/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions .075" x 1.0", anode pad dimensions 0.25" x 1.0". RJA in range of 20-40 C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RJA in range of 95 - 115 C/W. Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 3 UPS340 3 A LOW Vf Schottky Barrier Rectifier 16 mm TAPE WWW . Microsemi .C OM 13 INCH REEL PRODUCT PRELIMINARY DATA - Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 4 UPS340 3 A LOW Vf Schottky Barrier Rectifier WWW . Microsemi .C OM MECHANICAL Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 5 UPS340 3 A LOW Vf Schottky Barrier Rectifier NOTES: WWW . Microsemi .C OM NOTES NOTES Copyright 2003 Rev. 0., 2003-02-12 Microsemi Page 6 |
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