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Datasheet File OCR Text: |
CE CHENYI ELECTRONICS FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming,universal motor speed control, and heat control. DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Parameters DB3 DC34 DB4 DB6 mW Power Dissipation on Printed Circuit(L=10mm) Units Pc TA=50 tp=10u s F=100Hz 150 ITRM TSTG/TJ Repetitive Peak in-state Current 2.0 2.0 2.0 1.6 A Storage and Operating Junction Temperature -40 to +125/-40 to 110 ELECTRCAL CHARACTERISTICS Value Symbols Parameters Test Conditions DB3 c=22nF(Note 2) VBO Breakover Voltage(Note 2) See diagram1 Min Typ Max |+VBO||-VBO| | Vo IBO tr IB V| Dynamic Breakover Voltage(Note 1) Output Voltage(Note 1) Breakover Current(Note 1) Rise Time(Note 1) Leakage Current(Note 1) Breakover Voltage Symmetry c=22nF(Note 2) See diagram1 I=(IBO to IF=10mA) See diagram1 See diagram2 c=22nF(Note 2) See Diagram 3 Min Max Typ Max 5 100 1.5 10 V A S A Min 5 10 V Max 28 32 36 DC34 30 34 38 3 DB4 35 40 45 DB6 56 60 70 4 V V Units VB=0.5 VBO max see diagram 1 Notes: 1. Electrical characteristics applicable in both forward and reverse directions. 2. Connected in parallel with the devices. Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 2 CE CHENYI ELECTRONICS DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6 DIAGRAM 1: Current-voltage charateristics DIAGRAM 2: Test circuit for output voltage DIAGRAM 3: Test circuit see diagram2 adjust R for Ip=0.5A FIG.1-Power disspation versus ambient temperature(maximum values) FIG.2-Relative variation of VBO versus juntion temperature(typical values) FIG.3-Peak pulse current versus pulse duration (maximum values) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 2 |
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