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| KSH29/29C KSH29/29C General Purpose Amplifier Low Speed Switching Applications * Lead Formed for Surface Mount Application (No Suffix) * Straight Lead (I-PAK, "- I" Suffix) * Electrically Similar to Popular TIP29 and TIP29C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH29 : KSH29C VCEO Collector-Emitter Voltage : KSH29 : KSH29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W C C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH29 : KSH29C Collector Cut-off Current : KSH29 : KSH29C ICES Collector Cut-off Current : KSH29 : KSH29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz A A mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 A A Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V ICEO (c)2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH29/29C Typical Characteristics 1000 10 VCE = 2V IC=10IB tF, tSTG[s],TURN OFF TIME hFE, DC CURRENT GAIN tSTG 1 100 tF, VCC=30V tF, VCC=10V 0.1 10 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn Off Time 10 100 IC=10IB IC[A], COLLECTOR CURRENT tR, tD[s],TURN ON TIME 10 1 tR, VCC=30V 10 1 1m DC 50 0 s 0 s s tR, VCC=10V 0.1 tD, VBE(off)=2V 0.1 0.01 0.01 0.01 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Turn On Time Figure 4. Safe Operating Area 20 PC[W], POWER DISSIPATION 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2002 Fairchild Semiconductor Corporation KSH29C KSH29 Rev. A4, October 2002 KSH29/29C Package Dimensions D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 (1.00) 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 KSH29/29C Package Dimensions (Continued) I-PAK 6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20 0.20 0.20 0.60 0.70 0.10 6.10 0.20 0.80 0.20 1.80 MAX0.96 0.76 0.10 9.30 0.30 2.30TYP [2.300.20] 2.30TYP [2.300.20] 0.50 0.10 (c)2002 Fairchild Semiconductor Corporation 16.10 0.30 Dimensions in Millimeters Rev. A4, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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