|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD - 9.1097C IRF7105 HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 N-Ch VDSS 25V 0.10 3.5A P-Ch -25V 0.25 -2.3A 2 7 3 6 D2 D2 4 5 RDS(on) ID P -C HANNE L M O S F E T T op V ie w Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 3.5 2.8 14 2.0 0.016 20 3.0 -55 to + 150 -3.0 P-Channel -2.3 -1.8 -10 Units A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. --- Typ. --- Max. 62.5 Units C/W 11/4/97 IRF7105 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 25 -25 -- -- -- -- -- -- 1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.030 -- -0.015 -- 0.083 0.10 0.14 0.16 0.16 0.25 0.30 0.40 -- 3.0 -- -3.0 4.3 -- 3.1 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 9.4 27 10 25 1.7 -- 1.9 -- 3.1 -- 2.8 -- 7.0 20 12 40 9.0 20 13 40 45 90 45 90 25 50 37 50 4.0 -- 6.0 -- 330 -- 290 -- 250 -- 210 -- 61 -- 67 -- Units V V/C Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 1.0A VGS = 4.5V, ID = 0.50A VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.50A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 3.5A VDS = -15V, ID = -3.5A VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V, VDS = 20V, VGS = 0V, TJ = 55C VDS = -20V, VGS = 0V, TJ = 55C VGS = 20V N-Channel ID = 2.3A, VDS = 12.5V, VGS = 10V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS C iss C oss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total GateCharge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance A nC P-Channel ID = -2.3A, VDS = -12.5V, VGS = -10V N-Channel VDD = 25V, ID = 1.0A, RG = 6.0, RD = 25 ns P-Channel VDD = -25V, ID = -1.0A, RG = 6.0, RD = 25 nH Between lead , 6mm (0.25in.)from package and center of die contact N-Channel VGS = 0V, VDS = 15V, = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 2.0 -- -- -2.0 A -- -- 14 -- -- -9.2 -- -- 1.2 TJ = 25C, IS = 1.3A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.3A, VGS = 0V -- 36 54 N-Channel ns -- 69 100 TJ = 25C, IF = 1.3A, di/dt = 100A/s -- 41 75 P-Channel nC TJ = 25C, IF = -1.3A, di/dt = 100A/s -- 90 180 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -2.3A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C N-Channel IRF7105 ID , Drain-to-Source Current ( A ) ID , Drain-to-Source Current ( A ) VDS , Drain-to-Source Voltage ( V ) VDS , Drain-to-Source Voltage ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS (on) , Drain-to-Source On Resistance ID , Drain-to-Source Current ( A ) VGS , Gate-to-Source Voltage ( V ) ( Normalized) TJ , Junction Temperature ( C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature VGS , Gate-to-Source Voltage ( V ) C , Capacitance ( pF ) VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7105 ISD , Reverse Drain Current ( A ) N-Channel ID , Drain Current ( A ) VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area VDS RD ID , Drain Current ( A ) VGS RG D.U.T. + V - DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit TA , Ambient Temperature ( C ) VDS 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50K 12V .2F .3F Fig 10b. Switching Time Waveforms D.U.T. + V - DS 10V QGS QG QGD VGS 3mA VG IG ID Charge Current Sampling Resistors Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform P-Channel IRF7105 -ID , Drain-to-Source Current ( A ) -ID , Drain-to-Source Current ( A ) -VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V ) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics RDS (on) , Drain-to-Source On Resistance -ID , Drain-to-Source Current ( A ) -VGS , Gate-to-Source Voltage ( V ) ( Normalized) TJ , Junction Temperature ( C ) Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance Vs. Temperature -VGS , Gate-to-Source Voltage ( V ) C , Capacitance ( pF ) -VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7105 -ISD , Reverse Drain Current ( A ) P-Channel -ID , Drain Current ( A ) VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V ) Fig 18. Typical Source-Drain Diode Forward Voltage Fig 19. Maximum Safe Operating Area RD VDS VGS RG -ID , Drain Current ( A ) D.U.T. + -10V Pulse Width 1 s Duty Factor 0.1 % Fig 21a. Switching Time Test Circuit VDS TA , Ambient Temperature ( C ) 90% Fig 20. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50K 12V .2F .3F Fig 21b. Switching Time Waveforms VDS VGS -3mA IG ID Charge Current Sampling Resistors Fig 22a. Gate Charge Test Circuit + D.U.T. -10V QGS VG QG QGD Fig 22b. Basic Gate Charge Waveform - VDD N & P-Channel 100 IRF7105 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7105 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS IRF7105 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches) D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS L 8X RECOMMENDED FOOTPRINT 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO-8 E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101 TOP PART NUMBER BO TTO M IRF7105 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1.85 (.07 2) 4.10 (.161) 1.65 (.06 5) 3.90 (.154) 1.60 (.062) 1.50 (.059) 0 .35 (.013 ) 0 .25 (.010 ) T E R M IN A T IO N N U M BER 1 2 .05 (.080 ) 1 .95 (.077 ) 1 5.55 (.218) 5.45 (.215) 5 .30 (.208) 5 .10 (.201) 12.30 (.4 84) 11.70 (.4 61) F E E D D IR E C T IO N 8.10 (.3 18) 7.90 (.3 11) 6 .50 (.255) 6 .30 (.248) 2.6 0 (.102) 1.5 0 (.059) 2.20 (.0 86) 2.00 (.0 79) 13 .20 (.519) 12 .80 (.504) 15.40 (.607) 11.90 (.469) 2 330.00 (13.00 0) M AX. 50.0 0 (1.969) M IN . N O TES: 1 C O N F O R M S T O E IA -481-1 2 IN C LU D E S F LA N G E D IST O R T IO N @ O U T E R E D G E 3 D IM E N S IO N S M E A S U R E D @ H U B 4 C O N T R O L LIN G D IM E N S IO N : M E T R IC 18.40 (.7 24) M AX 3 14.40 (.5 66) 12.40 (.4 48) 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97 |
Price & Availability of IRF7105 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |