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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAV99S High-speed switching diode array Product specification Supersedes data of 2001 Mar 02 2001 May 14 Philips Semiconductors Product specification High-speed switching diode array FEATURES * Small plastic SMD package * High switching speed * Two electrically isolated series configuration arrays * Low capacitance. APPLICATIONS * General purpose switching in e.g. surface mounted circuits. * Rail to rail (ESD) protection. 6 5 4 6 5 BAV99S PINNING PIN 1 2 3 4 5 6 anode (a1) cathode (k2) cathode (k3)/anode (a4) anode (a3) cathode (k4) cathode (k1)/anode (a2) DESCRIPTION DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package. 4 1 Top view 2 3 MSA370 1 2 3 MBL211 Marking code: K1. Fig.1 Simplified outline (SC-88; SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Solder points at pins: 2, 3, 5 and 6. total power dissipation storage temperature junction temperature Ts 85 C; note 1 - - - - -65 -65 4.5 1 0.5 250 +150 +150 A A A mW C C - - - - 85 75 200 450 V V mA mA PARAMETER CONDITIONS MIN. MAX. UNIT 2001 May 14 2 Philips Semiconductors Product specification High-speed switching diode array ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage VR = 0; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched to IF = 10 mA; tr = 20 ns; see Fig.8 1 30 50 1.5 4 1.75 715 855 1 1.25 PARAMETER CONDITIONS BAV99S MAX. UNIT mV mV V V A A A pF ns V THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Solder points at pins: 2, 3, 5 and 6. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 260 UNIT K/W 2001 May 14 3 Philips Semiconductors Product specification High-speed switching diode array GRAPHICAL DATA BAV99S handbook, halfpage 250 MGW102 handbook, halfpage 300 MBG382 I Fmax (mA) 200 IF (mA) (1) (2) (3) 200 150 100 100 50 0 0 50 100 Ts (C) 150 0 0 1 VF (V) 2 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. handbook, full pagewidth 10 MGW103 I FSM (A) 1 10 -1 1 10 102 103 t p (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2001 May 14 4 Philips Semiconductors Product specification High-speed switching diode array BAV99S 105 IR (nA) 10 4 MGA884 handbook, halfpage 0.8 MBG446 Cd (pF) V R = 75 V 0.6 103 max 75 V 0.4 10 2 25 V 0.2 typ typ 10 0 100 T j ( o C) 200 0 0 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2001 May 14 5 Philips Semiconductors Product specification High-speed switching diode array BAV99S handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R = 50 S D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 2001 May 14 6 Philips Semiconductors Product specification High-speed switching diode array PACKAGE OUTLINE Plastic surface mounted package; 6 leads BAV99S SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2001 May 14 7 Philips Semiconductors Product specification High-speed switching diode array DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BAV99S This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 May 14 8 Philips Semiconductors Product specification High-speed switching diode array NOTES BAV99S 2001 May 14 9 Philips Semiconductors Product specification High-speed switching diode array NOTES BAV99S 2001 May 14 10 Philips Semiconductors Product specification High-speed switching diode array NOTES BAV99S 2001 May 14 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001 Internet: http://www.semiconductors.philips.com SCA 72 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp12 Date of release: 2001 May 14 Document order number: 9397 750 08226 |
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