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| IL485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES * Fast Turn On * Fast Turn Off * Low Input Current * Isolation Test Voltage, 5300 VACRMS APPLICATIONS * Motor Drive Controls * IGBT-predrivers * AC/DC Power Inverters DESCRIPTION The IL485 is a photovoltatic generator (optically coupled) designed to drive highly capacitive loads such as the gate of a power MOSFET transistor and at the same time provide isolation and floating voltage supply capability. The coupler consists of a GaAlAs light emitting diode as input control and a custom photo IC chip with photodiode arrary (PDA) as output device. When the LED is turned on, the emitted light produces a voltage in the PDA. The output of the PDA is used to drive the gate of a power MOSFET. The photo IC chip contains additional circuitry to enhance the switching speeds, (both turn on turn off). The optocoupler is packaged in a 6 pin DIP. Dimensions in inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 A1 K2 3 6 -out 5B 4 +out .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 Typ. .018 (0.45) .022 (0.55) .300 (7.62) Typ. .130 (3.30) .150 (3.81) 18 Typ. .020 (.051) Min. .031 (0.80) .035 (0.90) .100 (2.54) Typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81) Maximum Ratings Emitter Reverse Voltage ..................................................................................4 V Forward Current ..............................................................................60 mA Peak Forward Current....................................................................600 mA Power Dissipation.........................................................................100 mW Thermal Resistance....................................................................700 C/W Detector Breakdown Voltage (pin 5 to 6) ........................................................300 V Peak Input Current (pin 5 to 4) ........................................................50 mA Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA Power Dissipation (pin 5 to 4) ......................................................150 mW Package Insulation Thickness between Emitter and Detector ...................0.4 mm Isolation Test Voltage (1 sec.)..............................................5300 VACRMS Isolation Resistance VIO=500 V, TA=25C.................................................................. 1012 VIO=500 V, TA=100C............................................................... 1011 Comparative Tracking Index per DIN IEC 112/VDE 303, Part 1.........................................................175 Total Power Dissipation ................................................................250 mW Storage Temperature Range ..........................................-55C to +150C Operating Temperature Range.......................................-55C to +100C Junction Temperature ...................................................................... 100C Soldering Temperature (max. 10 sec., dip soldering distance to seating plane >1.5 mm)...................... 260C 5-1 Electrical Characteristics Parameter Input -- Emitter LED Forward Voltage LED Junction Capacitance VF CJ 0.9 1.5 25 2.1 V pF IF=10 mA VR=0 V, f=1 MHz Symbol Min. Typ. Max. Unit Condition MOSFET Driver Output with External Biasing (see Figure 1 and Figure 3) Zener Voltage (pin 4 to 6) Dynamic Output Voltage (pin 4 to 6) Dynamic Output Current (pin 4 to 6) VZ VOUT IOUT 9 13 11 V V IZT=10 A CL=2000 pF, VB=20 V IF=10 mA CL=2000 pF, VB=20 V IF=10 mA IF=40 mA IF=10 mA 5 15 300 20 3.5 3.5 5 5 mA mA Dynamic Output Resistance Sourcing (pin 4) Sinking (pin 4) Turn-on Time Turn-off Time ROUT s s tON tOFF CL=2000 pF, IF=40 mA Measure at VOUT=5 V, VB=20 V CL=2000 pF, IF=40 mA Measure at VOUT=2 V, VB=20 V MOSFET Driver Output without External Biasing (see Figure 2 and Figure 3) Output Open Circuit Voltage (pin 4 to 6) Output Short Circuit Current (pin 4 to 6) VOC ISC 7 2.1 8.4 10 4 16 20 650 3 1000 5 V A A IF=10 mA IF=10 mA IF=40 mA IF=10 mA CL=2000 pF (see Figure 3) Measure at VOUT=5 V, IF=40 mA CL=2000 pF (seeFigure 3) Measure at VOUT=2 V, IF=40 mA Dynamic Output Resistance Sinking (pin 4) Turn-on Time Turn-off Time ROUT tON tOFF s s MOSFET Driver Output Switching Speed (see Figure 3, Figure 4, Figure 5) Rise time Turn-on Time Fall time Turn-off Time Package Isolation Characteristics Input-Output CMRR Coupling Capacitance dv/dt CIO 15 kV 1 V/s pF VCM=1000 V f=1 MHz tR tON tF tOFF 500 3.5 300 3.5 ns s ns s M1 Cgs=2000 pF, VS=50 V Measure at 90%-10% M1 VDS (see Figure 4) 5-2 IL485 Figure 1. Switching time measurement with external voltage bias Figure 4. Switching time measurement without voltage bias +5V 1 100 2 Photo diode array M1 4 2000 pF 300V 6 3 Load 5 1 IF 2 Photo diode array 5 B 4 Vo VB 1K 2N2222 CL 3 6 Vs Figure 2. Switching time measurement Figure 5. IL485 connected in DC load switching configuration +5V 1 100 2 1K Photo diode array 4 2000 pF 300V M2 6 3 Load ac M1 5 ac 1 IF 2 Photo diode array 5B 4 Vo CL 2N2222 3 6 Figure 3. IL485 connected in AC load switching configuration V out ton 5V 2V ILED t toff t 5-3 IL485 |
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