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| SI4403BDY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = - 4.5 V - 20 0.023 @ VGS = - 2.5 V 0.032 @ VGS = - 1.8 V FEATURES ID (A) - 9.9 - 8.5 - 7.2 D TrenchFETr Power MOSFETS S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: SI4403BDY SI4403BDY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 2.3 2.5 1.6 - 55 to 150 - 7.9 - 30 - 1.3 1.35 0.87 W _C - 5.8 A Symbol VDS VGS 10 secs Steady State - 20 "8 Unit V - 9.9 - 7.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a Surface Mounted on 1" x 1" FR4 Board. Document Number: 72268 S-31412--Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 43 71 19 Maximum 50 92 25 Unit _C/W C/W 1 SI4403BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 350 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 9.9 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 8.5 A VGS = - 1.8 V, ID = - 3.1 A Forward Transconductancea gfs VSD VDS = - 15 V, ID = - 9.9 A IS = - 2.3 A, VGS = 0 V 20 0.014 0.018 0.024 36 - 0.8 - 1.1 0.017 0.023 0.032 S V W - 0.45 - 1.0 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 2.3 A, di/dt = 100 A/ms VDD = - 10 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 5 V, ID = - 9.9 A 33 4.2 7.6 25 45 150 70 40 40 70 225 110 60 ns 50 nC Notes a Pulse test; pulse width v 300 ms, duty cycle v 2%. b Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 1.5 V 12 TC = 125_C 25_C 0 0.0 - 55_C 1.0 1.5 2.0 6 1V 0 0 1 2 3 4 5 6 0.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72268 S-31412--Rev. A, 07-Jul-03 2 SI4403BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 4000 3500 C - Capacitance (pF) 0.06 3000 2500 2000 1500 1000 500 Crss 0 0 6 12 18 24 30 0 4 8 12 16 20 Coss Vishay Siliconix Capacitance Ciss 0.04 VGS = 1.8 V 0.02 VGS = 2.5 V VGS = 4.5 V 0.00 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 9.9 A 4 1.5 1.4 r DS(on) - On-Resistance (W) (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 7 14 21 28 35 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 9.9 A 3 2 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.08 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.06 ID = 9.9 A 0.04 TJ = 25_C ID = 3.1 A 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72268 S-31412--Rev. A, 07-Jul-03 www.vishay.com 3 SI4403BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 24 ID = 350 mA 0.2 0.1 Power (W) 18 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc 1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 71_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72268 S-31412--Rev. A, 07-Jul-03 SI4403BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72268 S-31412--Rev. A, 07-Jul-03 www.vishay.com 5 |
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