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X9C503SZ 73CB07 1A470M 222MR SEF307C ERT3EAF SG6513 M708B1
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  Datasheet File OCR Text:
 MS2601
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz.
PACKAGE STYLE 400 x 400 2NL FLG
1
2 3
4
FEATURES INCLUDE:
* Input/Output Matching * Gold Metallization * Emitter Ballasting
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG JC 0.45 A 34 V 11.5 W @ TC = 25 C -65 C to+200 C -65 C to+200 C 13.0 C/W
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE POUT PG C
TC = 25 C
TEST CONDITIONS
IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCE = 30 V VCE = 5 V IC = 100 mA f = 2700 to 3100 MHz Duty Cycle = 10%
MINIMUM
45 45 3.5
TYPICAL MAXIMUM
UNITS
V V V
0.5 10 1.0 5.2 27 150
mA --W dB %
VCC = 30 V PIN = 0.3 W Pulse Width = 100 S
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


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