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| MRF427 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45 L A FULL R FEATURES: * PG = 18 dB min. at 25 W/30 MHz * IMD3 = -34 dBc max. at 25 W(PEP) * OmnigoldTM Metalization System E C O.125 NOM. C B B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O IJ K 6.0 A 110 V 65 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.19 C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 ORDER CODE: ASI10467 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE Cob GP IMD3 TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 200 mA IE = 10 mA VCE = 5.0 V VCB = 50 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 110 65 4.0 15 90 60 18 20 - 37 -34 UNITS V V V V --pF dB dBc VCE = 50 V POUT = 25 W (PEP) f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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