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E2Q0020-38-71 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1531
electronic components KGF1531
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies that features low voltage operation, low current operation, high conversion gain, and low distortion. The KGF1531 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of the high 3rd-order intercept point, the KGF1531 is ideal as a small-signal receiving mixer for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties.
FEATURES
* Low voltage and low current operation: 3 V, 8 mA (max.) * Specifications guaranteed as the mixer operation to a fixed matching circuits for 3 V, 1.9 GHz * High conversion gain: 12 dB (typ.) at 1.9 GHz * Low distortion: 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP
PACKAGE DIMENSIONS
1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15
0.36 0.74
3.00.2
1.50.15
0.3 MIN
0 to 0.15
Package material 1.90.1 2.80.15 Lead frame material 0.125
+0.03 -0
Epoxy resin 42 alloy Solder plating 5 mm or more
Pin treatment Solder plate thickness
(Unit: mm)
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electronic components
KGF1531
MARKING
(4)
(3)
LXX
(1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate1 (2) Gate2 (3) Drain (4) GND
CIRCUIT
D(3) G2(2) G1(1)
GND(4)
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KGF1531
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = 25C -- -- Unit V V mA mW C C Min. -- -3.0 -- -- -- -45 Max. 4.0 0.4 50 200 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Noise figure Conversion gain Output power L-R Port to port Isolation R-I L-I Third-order intercept point IP3 (*2), f2 = 1.901 GHz dBm -- ISO (*1), PRF = -20 dBm dB -- Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm F GC PO1 Condition VGS = -3 V VGD(1,2) = -6 V VDS = 3 V, VGS(1,2) = -2 V VDS = 3 V, VGS = 0 V (*1), PIN = -20 dBm VDS = 3 V, IDS = 100 mA VDS = 3 V, IDS = 6 mA (*1) (*1), PRF = -20 dBm (*1) Unit mA mA mA mA mA V mS dB dB dBm Min. -- -- -- 15 -- -1.4 23 -- 10 0 Typ. -- -- -- 25 6.0 -- 30 5.0 12 1.0 15 22 28 12.5 -- -- Max. 30 30 30 -- 8.0 -0.6 -- -- -- --
*1 Self-bias condition: VDD = 3 V 0.3 V, VG(1,2) = 0 V, fRF = 1.9 GHz, fLO = 1.65 GHz, PLO = 0 dBm
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KGF1531
RF CHARACTERISTICS
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KGF1531
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electronic components Typical S Parameters
KGF1531
VDD = 3 V, VG2 = 0 V, ID = 6.13 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.002 1.006 1.003 1.003 1.005 0.999 0.996 0.995 0.992 0.987 0.983 0.979 0.977 0.972 0.970 0.963 0.959 0.953 0.947 0.940 0.922 0.927 0.925 0.913 0.900 0.891 0.880 0.874 0.863 0.851 -2.06 -4.21 -6.32 -8.72 -10.85 -13.27 -15.36 -17.66 -19.96 -22.12 -24.16 -26.53 -28.56 -31.19 -33.26 -35.49 -37.73 -40.11 -42.58 -44.82 -47.03 -49.42 -51.84 -54.35 -57.14 -59.49 -62.22 -64.94 -66.98 -70.00 0.485 0.660 0.735 0.777 0.804 0.821 0.824 0.838 0.854 0.858 0.868 0.882 0.894 0.906 0.921 0.933 0.945 0.967 0.981 0.999 1.017 1.029 1.064 1.081 1.091 1.121 1.152 1.196 1.227 1.277 -156.45 -163.21 -171.52 -178.89 175.03 170.22 164.84 160.75 156.05 152.38 148.70 144.57 141.09 137.65 133.84 130.62 127.43 123.66 120.52 116.72 112.95 110.02 106.74 103.70 99.12 96.98 93.75 90.37 87.35 83.46 0.001 0.001 0.002 0.004 0.004 0.003 0.005 0.004 0.005 0.006 0.004 0.004 0.004 0.003 0.007 0.004 0.006 0.005 0.005 0.006 0.006 0.006 0.006 0.009 0.012 0.012 0.013 0.015 0.015 0.021 134.30 89.30 49.34 67.00 76.91 77.54 61.41 76.89 59.09 62.64 62.28 67.53 71.94 88.94 107.44 76.87 74.93 106.06 104.31 128.87 106.36 115.80 153.54 152.18 137.58 146.84 150.18 151.42 158.84 149.86 0.973 0.963 0.959 0.954 0.952 0.953 0.950 0.947 0.950 0.947 0.949 0.948 0.951 0.950 0.950 0.950 0.950 0.948 0.947 0.948 0.949 0.948 0.948 0.949 0.949 0.952 0.957 0.950 0.957 0.955 -1.54 -2.43 -3.20 -4.02 -4.71 -5.26 -6.06 -6.90 -7.42 -8.21 -8.92 -9.94 -10.48 -11.45 -12.14 -13.12 -13.80 -14.62 -15.36 -16.33 -17.37 -17.95 -18.82 -19.59 -20.37 -21.07 -22.18 -22.78 -24.27 -24.83
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electronic components Typical S Parameters
KGF1531
VDD = 3 V, VG2 = 0 V, ID = 6.13 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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KGF1531
Test Circuit and Bias Configuration for KGF1531
C2 T7 CC LO KGF1531 RF CC T1 RG1 T2 T3 (1) T4 C1 (4) T11 C3 C4 RG2 T5 T6 (2) (3) T8 L1 T9
CB T12
T10
CC IF
RFC VDD CB CF
T1: Z0 = 75 W, E = 25 deg T5: Z0 = 75 W, E = 24 deg T2: Z0 = 100 W, E = 2 deg T6: Z0 = 100 W, E = 72 deg T3: Z0 = 100 W, E = 68 deg T11: Z0 = 100 W, E = 5 deg T4 = T7: Z0 = 100 W, E = 10 deg L1 = 60 nH, C1 = 1.15 pF, C2 = 1.30 pF, C3 = 2.50 pF, C4 = 18.0 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG1 = RG2 = 1000 W
f = 1.9GHz T8: Z0 = 100 W, E = 5 deg T9: Z0 = 100 W, E = 65 deg T10: Z0 = 75 W, E = 21 deg T12: Z0 = 75 W, E = 40 deg
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