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 DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
MBD128
PUMD13 NPN/PNP resistor-equipped transistors
Product specification 2001 Feb 27
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
FEATURES * Transistors with different polarity and built-in bias resistors R1 and R2 (4.7 and 47 k respectively) * No mutual interference between the transistors * Simplification of circuit design * Reduced number of components and board space.
TR1
PUMD13
handbook, halfpage
6 5 4 R1
5
4
6
R2 TR2
APPLICATION * Especially suitable for space reduction in interface and driver circuits * Inverter circuit configurations without use of external resistors. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN 1, 4 2, 5 6, 3 MARKING TYPE NUMBER PUMD13 MARKING CODE 3t1 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
R2 1 Top view 2 3
MAM343
R1
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
2, 5 1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Feb 27
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C - MIN.
PUMD13
MAX.
UNIT
Per transistor for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative input voltage TR2 positive negative Io ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC88 standard mounting conditions. total power dissipation 200 mW output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature +5 -30 100 100 300 +150 150 +150 V V mA mA mW C C C +30 -5 V V open emitter open base open collector 50 50 10 V V V
2001 Feb 27
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. See standard mounting conditions SC88. CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - - 100 - - 1.3 3.3 8 IE = ie = 0; VCB = 10 V; f = 1 MHz TYP. - - - - - - 0.6 0.9 4.7 10 PARAMETER from junction to ambient CONDITIONS in free air; note 1 VALUE 416
PUMD13
UNIT K/W
MAX.
UNIT
Per transistor for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance TR1 (NPN) TR2 (PNP) VCB = 50 V; IE = 0 VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 5 V; IC = 10 mA IC = 5 mA; IB = 0.25 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 5 mA 100 1 50 170 - 100 0.5 - 6.1 12 mV V V k nA A A A
- -
- -
2.5 3
pF pF
2001 Feb 27
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD13
103 handbook, halfpage hFE
(1) (2)
MLD533
103 handbook, halfpage
MLD532
VCEsat (mV)
102
(3)
102
(1)
10
(3) (2)
1 10-1
1
10
IC (mA)
102
10 10-1
1
10
IC (mA)
102
TR1 (NPN); VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
TR1 (NPN); IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
handbook, halfpage
10
MLD535
102 handbook, halfpage Vi(on)
MLD534
Vi(off) (V)
(V) 10
1
(1) (2) (3) (1)
1
(2)
(3)
10-1 10-2
10-1
1
IC (mA)
10
10-1 10-1
1
10
IC (mA)
102
TR1 (NPN); VCE = 5 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
TR1 (NPN); VCE = 0.3 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
Fig.5
Input-off voltage as a function of collector current; typical values.
Fig.6
Input-on voltage as a function of collector current; typical values.
2001 Feb 27
5
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD13
-103 handbook, halfpage hFE
(1) (2)
MLD537
-103 handbook, halfpage VCEsat (mV)
MLD536
-102
(3)
-102 -10
(1)
(3) (2)
-1 -10-1
-1
-10
IC (mA)
-102
-10 -10-1
-1
-10
IC (mA)
-102
TR2 (PNP); VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
TR2 (PNP); IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
Fig.7
DC current gain as a function of collector current; typical values.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
handbook, halfpage
-10
MLD539
-102 handbook, halfpage Vi(on)
MLD538
Vi(off) (V)
(V) -10
-1
(1) (2) (3) (3) (2)
-1
(1)
-10-1 -10-2
-10-1
-1
IC (mA)
-10
-10-1 -10-1
-1
-10
IC (mA)
-102
TR2 (PNP); VCE = -5 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
TR2 (PNP); VCE = -0.3 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
Fig.9
Input-off voltage as a function of collector current; typical values.
Fig.10 Input-on voltage as a function of collector current; typical values.
2001 Feb 27
6
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PUMD13
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2001 Feb 27
7
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
PUMD13
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Feb 27
8
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
PUMD13
2001 Feb 27
9
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
PUMD13
2001 Feb 27
10
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
PUMD13
2001 Feb 27
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 71
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2001
Feb 27
Document order number:
9397 750 07876


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81017701
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin TSSOP T/R 99000: USD0.0219
45000: USD0.0221
24000: USD0.0241
9000: USD0.0244
3000: USD0.0358
BuyNow
6000

Bristol Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13
Nexperia RFQ
110000
PUMD13
NXP Semiconductors RFQ
1440
PUMD13,115
NXP Semiconductors RFQ
186000

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13,115
NXP Semiconductors SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 2-ELEMENT, NPN AND PNP, SILICON (Also Known As: PUMD13) 5557: USD0.026
1001: USD0.036
1: USD0.08
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7887
PUMD13,115
NXP Semiconductors SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 2-ELEMENT, NPN AND PNP, SILICON 5557: USD0.026
1001: USD0.036
1: USD0.08
BuyNow
7887
PUMD13,115
Nexperia SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 2-ELEMENT, NPN AND PNP, SILICON 5557: USD0.026
1001: USD0.036
1: USD0.08
BuyNow
7578
PUMD13,115
Nexperia SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 2-ELEMENT, NPN AND PNP, SILICON (Also Known As: PUMD13) 5557: USD0.026
1001: USD0.036
1: USD0.08
BuyNow
7578
PUMD13,115
Nexperia SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 2-ELEMENT, NPN AND PNP, SILICON 45715: USD0.03
20001: USD0.035
1: USD0.2
BuyNow
88000

Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13/ZL115
NXP Semiconductors Nexperia PUMD13 - Small Signal Bipolar Transistor, 0.1A, 50V, NPN and PNP, SC-88 ' 1000: USD0.0419
500: USD0.0444
100: USD0.0463
25: USD0.0483
1: USD0.0493
BuyNow
3800
PUMD13,115
Nexperia Nexperia PUMD13 - Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP 1000: USD0.0195
500: USD0.0207
100: USD0.0216
25: USD0.0225
1: USD0.023
BuyNow
3000
PUMD13,135
Nexperia PUMD13 - NPN/PNP resistor-equipped transistor 1000: USD0.0195
500: USD0.0207
100: USD0.0216
25: USD0.0225
1: USD0.023
BuyNow
9900
PUMD13/1F
Nexperia PUMD13 - Small Signal Bipolar Transistor 1000: USD0.0211
500: USD0.0223
100: USD0.0233
25: USD0.0243
1: USD0.0248
BuyNow
100000

TTI

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13-QF
PUMD13-QF
Nexperia Digital Transistors PUMD13-Q/SOT363/SC-88 20000: USD0.0237
30000: USD0.0232
250000: USD0.0228
BuyNow
0
PUMD13,135
PUMD13 135
Nexperia Digital Transistors SOT363 50V .1A NPN/PNP RET 20000: USD0.0218
30000: USD0.0213
50000: USD0.0209
100000: USD0.0204
150000: USD0.02
250000: USD0.0196
BuyNow
0
PUMD13-QX
PUMD13-QX
Nexperia Digital Transistors PUMD13-Q/SOT363/SC-88 21000: USD0.0257
24000: USD0.0248
45000: USD0.0228
BuyNow
0
PUMD13,115
PUMD13 115
Nexperia Digital Transistors SOT363 50V .1A NPN/PNP RET 21000: USD0.0241
30000: USD0.0236
90000: USD0.0232
150000: USD0.0227
BuyNow
0

TME

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13-QX
PUMD13-QX
Nexperia Transistor: NPN / PNP; bipolar 30000: USD0.0259
9000: USD0.0289
3000: USD0.0318
1000: USD0.0358
500: USD0.0418
100: USD0.0697
25: USD0.1494
1: USD0.1992
RFQ
0
PUMD13,115
PUMD13.115
Nexperia Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A 12000: USD0.0326
3000: USD0.035
500: USD0.0389
100: USD0.044
20: USD0.0489
BuyNow
3610

Ameya Holding Limited

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13
Nexperia RFQ
148413

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13
NXP Semiconductors NPN/PNP RESISTOR-EQUIPPED TRANSISTOR; R1=4.7 KILO OHM, R2=47 KILO OHM Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon RFQ
44725

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13
INSTOCK RFQ
70196

Avnet Asia

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13-QX
PUMD13-QX
Nexperia Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: PUMD13-QX) 1800000: USD0.03129
900000: USD0.03205
360000: USD0.03284
180000: USD0.03367
108000: USD0.0341
72000: USD0.03455
36000: USD0.035
BuyNow
0
PUMD13115
PUMD13,115
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R (Alt: PUMD13,115) 1950000: USD0.02497
975000: USD0.02557
390000: USD0.0262
195000: USD0.02687
117000: USD0.02721
78000: USD0.02756
39000: USD0.02793
BuyNow
0

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13-QX
PUMD13-QX
Nexperia Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: PUMD13-QX) BuyNow
582000
PUMD13,115
PUMD13,115
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R (Alt: PUMD13,115) BuyNow
207000
PUMD13-QF
PUMD13-QF
Nexperia Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: PUMD13-QF) BuyNow
0
PUMD13,135
PUMD13,135
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R (Alt: PUMD13,135) BuyNow
0

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13,115
C1S537100383972
Nexperia PUMD13/SOT363/SC-88 2000: USD0.0269
500: USD0.03
200: USD0.0332
100: USD0.0333
50: USD0.0394
BuyNow
4848

CHIPMALL.COM LIMITED

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13,135
Nexperia 100@10mA,5V 300mW 100mA 50V 100nA 1 NPN - Pre-Biased,1 PNP - Pre-Biased SOT-363 Digital Transistors ROHS 5: USD0.11348
50: USD0.09388
150: USD0.08653
500: USD0.0832
2500: USD0.08124
BuyNow
8435

EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13,115
PUMD13,115
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R (Alt: PUMD13,115) BuyNow
90000
PUMD13,135
PUMD13,135
Nexperia Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R (Alt: PUMD13,135) BuyNow
50000
PUMD13-QX
PUMD13-QX
Nexperia Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: PUMD13-QX) BuyNow
0
PUMD13-QF
PUMD13-QF
Nexperia Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: PUMD13-QF) BuyNow
0

Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13,135
NXP Semiconductors Stock, ship today 1: USD0.006
RFQ
30000

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
PUMD13-QX
Nexperia 6000: USD0.0254
15000: USD0.0237
BuyNow
15000

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