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| PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) 2.7V @VGE = 15V, I C = 28A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 900 51 28 100 100 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.64 -----40 ------ Units C/W g (oz) Revision 0 C-267 IRGPF50F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 900 ------V VGE = 0V, I C = 250A 20 ------V VGE = 0V, IC = 1.0A ---- 0.74 ---- V/C VGE = 0V, I C = 1.0mA ---2.1 2.7 IC = 28A V GE = 15V ---2.7 ---V IC = 51A See Fig. 2, 5 ---2.4 ---IC = 28A, T J = 150C 3.0 ---5.5 VCE = VGE, IC = 250A ---- -9.7 ---- mV/C VCE = VGE, IC = 250A 12 18 ---S VCE = 100V, I C = 28A ------- 250 A VGE = 0V, V CE = 900V ------- 2000 VGE = 0V, V CE = 900V, T J = 150C ------- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 81 16 29 32 22 200 130 1.1 1.8 2.9 32 20 480 450 5.7 13 2300 180 27 Max. Units Conditions 120 IC = 28A 24 nC VCC = 400V See Fig. 8 44 VGE = 15V ---TJ = 25C ---ns IC = 28A, V CC = 720V 280 VGE = 15V, R G = 5.0 180 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 4.1 ---TJ = 150C, ---ns IC = 28A, V CC = 720V ---VGE = 15V, R G = 5.0 ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-268 IRGPF50F 60 For b oth : Triangula r w ave: LO A D C UR R E N T (A ) D uty c yc le: 50% TJ = 125C T sink = 90C G ate d rive as s pec ified P ow e r Diss ipa tion = 4 0W 40 S quare w ave: 60% of rated voltage C lamp voltage: 80% of rated 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 I C , C ollector-to-E mitter C urrent (A ) 100 TJ = 2 5C T J = 1 50 C IC , Collector-to-Em itter C urrent (A ) 100 TJ = 1 50 C TJ = 25 C 10 10 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-269 IRGPF50F 60 V G E = 15 V 4.0 VG E = 1 5 V 80 s P UL S E W ID TH I C = 56 A V C E , C ollector-to-E m itter V oltage (V) Maxim um D C Collector C urrent (A ) 50 3.5 40 3.0 30 2.5 I C = 28 A 20 2.0 I C = 1 4A 10 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 Therm al R esponse (Z th JC ) D = 0.5 0 0 .20 0.1 0.1 0 0 .05 PD M t SIN G LE P U LSE (TH ER M AL R E SP O N SE ) 1 t2 0 .02 0.0 1 N o te s: 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-270 IRGPF50F 50 0 0 40 0 0 30 0 0 Cies Coes 20 0 0 V G E , G ate-to-E m itter V oltage (V ) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0 V I C = 2 8A 16 C, C apacitance (pF) 12 8 10 0 0 Cres 4 0 1 10 0 0 20 40 60 80 1 00 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 0 T o tal S w itc hing Los se s (m J) T o ta l S w itc h in g L o s se s (m J ) VC C VG E TC IC = 72 0V = 1 5V = 25C = 28 A 100 RG = 5 V G E = 15 V V C C = 7 20 V I C = 56 A 10 I C = 2 8A I C = 1 4A 1 0.1 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G a te R e s is ta n c e ( ) W TC, C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-271 IRGPF50F 16 I C , C ollec to r-to -E m itter C u rre nt (A ) Total Sw itching Losses (m J) RG TC V CC VGE =5 = 150 C = 7 20 V = 15 V 1000 VG E E 20 V G= T J = 12 5C 12 100 S A FE O P E RA TIN G A RE A 10 8 4 1 0 10 20 30 40 50 60 0.1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-272 |
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