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| Composite Transistors XN0F262 Silicon NPN epitaxial planar transistor For muting 4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 I Features * Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 3 2 1 0.30+0.10 -0.05 0.50+0.10 -0.05 10 1.1+0.2 -0.1 (0.65) I Absolute Maximum Ratings Ta = 25C Parameter Rating of element Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 300 150 -55 to +150 Unit V V V mA mW C C 1: Emitter (Tr1) 2: Collector 3: Emitter (Tr2) EIAJ: SC-74 Marking Symbol: 6C Internal Connection 4 5 6 Tr2 0 to 0.1 4: Base (Tr2) 5: N.C. 6: Base (Tr1) Mini6-G1 Package 3 2 I Electrical Characteristics Ta = 25C 3C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Input resistance Gain bandwidth product Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) R1 fT VCB = 10 V, IE = -50 mA, f = 200 MHz Conditions IC = 1 A, IE = 0 IC = 1 mA, IB = 0 IE = 1 A, IC = 0 VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 50 mA IC = 50 mA, IB = 2.5 mA 200 270 200 100 Min 30 20 5 1 1 600 80 325 Typ Max Unit V V V A A mV MHz 1.1+0.3 -0.1 Tr1 1 0.40.2 5 Publication date: May 2002 SJJ00229AED 1 XN0F262 PT T a 350 300 IC VCE 700 600 Ta = 25C IB = 2.0 mA 1.6 mA 1.2 mA 1 000 900 800 VCE = 5 V IC IB Total power dissipation PT (mW) Collector current IC (mA) 250 200 150 100 50 0 500 400 300 200 Collector current IC (mA) 700 600 500 400 300 200 100 0.8 mA 0.4 mA 100 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 0 0 50 100 150 200 250 300 350 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IC VBE Collector to emitter saturation voltage VCE(sat) (V) 120 VCE = 5 V 25C 1 VCE(sat) IC IC / IB = 20 hFE IC 600 VCE = 5 V Forward current transfer ratio hFE 100 500 Collector current IC (mA) 80 Ta = 75C 400 Ta = 75C 25C -25C 60 0.1 Ta = 75C 25C - 25C 300 40 200 -25C 20 100 0 0 0.2 0.4 0.6 0.8 1.0 0.01 0.001 0.01 0.1 1 0 0.001 0.01 0.1 1 Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) 2 SJJ00229AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY |
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