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SLD1324ZT
High-Power Density 1W Laser Diode For the availability of this product, please contact the sales office.
Description The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine tuning of wavelength is possible by controlling the laser chip temperature. Features * High power Recommended optical power output :1.0W * Emitting line width :200m * Flat package with built-in photodiode, TE cooler and thermistor Applications * Medical use * Solid state laser excitation Structure AlGaInP quantum well structure laser diode Absolute Maximum Ratings (Tth = 25C) * Optical power output PO * Reverse voltage VRLD PD * Operating temperature (Tth) Topr * Storage temperature Tstg * Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 Function T. E. Cooler (negative) T. E. Cooler (negative) Thermister Thermister LD (anode) LD (anode) No. 7 8 9 10 11 12 Function LD (cathode) LD (cathode) PD (cathode) PD (anode) T. E. Cooler (positive) T. E. Cooler (positive)
1 12 123
M-272
Equivalent Circuit
T.E. Cooler
TH
LD
PD
456
789
10 11 12
1.1 2 15 -10 to +30 -40 to +85 4.0
W V V C C A
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E94724-PP
SLD1324ZT
Optical and Electrical Characteristics Item Threshold current Operating current Operating voltage Wavelength Monitor current Radiation angle (F.W.H.M) Positional accuracy Differential efficiency Thermistor resistance Marking Perpendicular Parallel Position Angle Symbol Ith Iop Vop Imon // X, Y D Rth PO = 1.0W PO = 1.0W PO = 1.0W
(Tth = Thermistor temperature, Tth = 25C) Conditions Min. Typ. 0.9 2.1 2.2 685 0.15 15 4 695 1.2 24 11 Max. 1.5 3.0 3.0 705 3.0 35 15 100 3 0.3 0.9 10 1.5 Unit A A V nm mA degree degree m degree W/A k
PO = 1.0W, VR = 10V PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W Tth = 25C
Production factory
4
1
1
Lot No.
Categories are not specified by marking.
Safety goggles for protection from laser beam
Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.
Laser diode
Lens Optical material
IR fluorescent plate
Optical board
Optical power output control device Temperature control device
-2-
SLD1324ZT
Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics
1.2 Tth = 3025 15 0 -10C 1.0
Threshold current vs. Temperature characteristics
1.5
Po-Optical power output [W]
Imon 0.8 -10 0.6 Tth = 30C 0.4 IF
Ith-Threshold current [mA]
1
0.2 0.5 -10
0 0 0.5 1.0 1.5 2.0 IF Forward current [A] 0 0.5 1.0 Imon-Monitor Current [mA] 1.5 2.0
0
10
20
30
Tth-Thermistor temperature [C]
Slope efficiency vs. Temperature characteristics
1 700
Temperature dependence of wavelength
PO = 1W
D Slope efficiency [W/A]
690
0.5
p-Wavelength [nm]
680
670
0 -10
0
10
20
30
660 -10
0
10
20
30
Tth-Thermistor temperature [C]
Tth-Thermistor temperature [C]
Power dependence of far field pattern (Perpendicular to junction)
Tth = 25C
Power dependence of far field pattern (Parallel to junction)
Tth = 25C
Relative radiant intensity
PO = 1.0W 0.8W 0.6W 0.4W 0.2W -60 -40 -20 0 20 40 60
Relative radiant intensity
PO = 1.0W 0.8W 0.6W 0.4W 0.2W -60 -40 -20 0 20 40 60
Angle [degree]
-3-
Angle [degree]
SLD1324ZT
TE cooler characteristics 1
40 Tc = 32C
SV
2
15 40 Tth = 25C
IT = 4A
3A
15
Q-Absorbed heat [W]
VT-Pin voltage [V]
10 IT = 4A
10
20
3A 2A 5
20
2A
10
10
3A
T
5
VS
Q
4A
0
2A
80 100 0 0 0 20 40 60 80 100
0 0
20
40
60
T-Temperature difference [C] T: Tc - Tth Tth Thermistor temperature : Tc : Case temperature
T-Temperature difference [C]
Thermistor characteristics
50
Rth-Thermistor resistance [k]
10
5
1 -10 0
10 20 30 40 50 60 70
Tth-Thermistor temperature [C]
-4-
VT-Pin voltage [V]
T VS V
Q-Absorbed heat [W]
30
30
T
V
T
VS
3A
Q
2A
4A
SLD1324ZT
Power dependence of Spectrum (Tth = 25C)
Po = 0.2W 1.00 1.00
Po = 0.4W
Relative radiant intensity
0.00 688 Wavelength [nm]
Relative radiant intensity
698 0.00 688 Wavelength [nm]
698
Po = 0.6W 1.00 1.00
Po = 0.8W
Relative radiant intensity
0.00 688 Wavelength [nm]
Relative radiant intensity
698 0.00 688 Wavelength [nm]
698
Po = 1.0W 1.00
Relative radiant intensity
0.00 688 Wavelength [nm]
698
-5-
SLD1324ZT
Temperature dependence of Spectrum (Po = 1W)
Tth = -10C 1.00 1.00 Tth = 0C
Relative radiant intensity
Relative radiant intensity
0.00 675 Wavelength [nm] 0.00 675 Wavelength [nm]
705
705
Tth = 15C 1.00 1.00
Tth = 25C
Relative radiant intensity
0.00 675 Wavelength [nm]
Relative radiant intensity
705 0.00 675 Wavelength [nm]
705
Tth = 30C 1.00
Relative radiant intensity
0.00 675 Wavelength [nm]
705
-6-
SLD1324ZT
Package Outline
Unit: mm
M-272
+ 0.06 4 - 3.0 0
41.0 0.05
20.0 0.05
18.0
5.0 Window Glass
8.0 0.5
12 - 0.64 2.54 46.0 0.5
0.8 MAX
23.0 36.0 0.5
LD CHIP
10.0 0.1
36.0 0.5 9.0 0.2
118 g
Reference Plane
20.5 0.1
SONY CODE EIAJ CODE JEDEC CODE
M-272
Distance between pilot hole and emitting area.
PACKAGE WEIGHT
-7-
3.0
13.05 0.1
12.35

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