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Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
0.33+0.05 -0.02
Unit: mm
0.10+0.05 -0.02
Features
* High transition frequency fT * Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb * SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
3 0.15 min. 0.800.05 1.200.05 0.520.03 0 to 0.01 5 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 3 50 100 125 -55 to +125 Unit V V V mA mW C C
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: 1S
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio hFE ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Reverse transfer capacitance (Common base) Collector-base parameter Symbol VCEO VEBO ICBO hFE hFE VCE(sat) fT Cob Crb rbb' * CC Conditions IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 4 V, IC = 5 mA VCE = 4 V, IC = 100 A VCE = 4 V, IC = 5 mA IC = 20 mA, IB = 4 mA VCE = 4 V, IE = -5 mA, f = 200 MHz VCB = 4 V, IE = 0, f = 1 MHz VCB = 4 V, IE = 0, f = 1 MHz VCB = 4 V, IE = -5 mA, f = 31.9 MHz 1.4 1.9 1.4 0.45 11 0.5 2.7 V GHz pF pF ps 75 0.75 Min 10 3 1 400 1.6 Typ Max Unit V V A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
Publication date: April 2004
SJC00306AED
1
2SC5939
PC Ta
120
IC VCE
50 45 Ta = 25C 50 IB = 500 A 40 VCE = 4 V
IC VBE
Collector power dissipation PC (mW)
100
25C
Collector current IC (mA)
80
35 30 25 20 15 10 5 100 A 300 A
Collector current IC (mA)
40
400 A
Ta = 85C 30
60
200 A
20 -25C 10
40
20
0
0
20
40
60
80
100 120 140
0
0 0 2 4 6 8 10 12
0
0.2
0.4
0.6
0.8
1
1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1 IC/IB = 5
140 VCE = 4 V 120 Ta = 85C 100 80 60 40 20 0 0.1
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
10
Cob VCB
f = 1 MHz Ta = 25C
Forward current transfer ratio hFE
25C
-25C
0.1 Ta = 85C 25C
-25C
0.01 0.1
1
10
1
10
100
1
0
2
4
6
8
10
12
14
16
Collector current IC (mA)
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJC00306AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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