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| AP1802GU Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package D 2021-8 S S S D D G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 32m 5.8A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 Rating 20 12 5.8 4.7 20 1.6 0.013 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value 78 Unit /W Data and specifications subject to change without notice 200118052 AP1802GU Electrical Characteristics@Tj=25oC(unless otherwise specified ) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min . Typ . Max . Units 20 0.5 0.02 13 9 1.5 4 9 10 16 5 620 120 100 1.2 27 32 50 1.2 1 10 100 15 990 1.8 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=5A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=12V ID=5A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Test Conditions IS=1.3A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/s Min. - Typ. 20 11 Max. Units 1.2 V ns nC Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 /W at steady state. AP1802GU 20 20 T A =25 C 16 o ID , Drain Current (A) 12 ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V T A = 150 C 16 o 5.0V 4.5V 3.5V 2.5V 12 8 8 4 4 V G = 1.5 V 0 0 1 2 3 0 0 1 2 V G = 1 .5V 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.5 I D =3A 40 Normalized R DS(ON) T A =25 C o ID=5A V G =4.5V 1.2 RDS(ON) (m ) 35 0.9 30 25 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 5 4 1.4 3 IS(A) T j =150 o C T j =25 o C Normalized VGS(th) (V) 1.2 1.0 2 0.6 1 0 0 0.2 0.4 0.6 0.8 1 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1802GU f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =5A 10 C iss V DS =10V V DS =12V V DS =16V 8 C (pF) C oss 100 6 C rss 4 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us ID (A) 0.1 0.1 0.05 1 1ms 10ms 0.02 0.01 Single Pulse PDM t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125/W 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 100ms 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V T j =25 o C 20 VG T j =150 o C ID , Drain Current (A) QG 4.5V QGS QGD 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit |
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